Modeling of electron transport in sub-100 nm channel length silicon MOSFETs
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/11414 |
| _version_ | 1811094487431118848 |
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| author | Jacobs, Jarvis Benjamin |
| author2 | Dimitri Antoniadis |
| author_facet | Dimitri Antoniadis Jacobs, Jarvis Benjamin |
| author_sort | Jacobs, Jarvis Benjamin |
| collection | MIT |
| description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. |
| first_indexed | 2024-09-23T16:01:05Z |
| format | Thesis |
| id | mit-1721.1/11414 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T16:01:05Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/114142019-04-10T17:38:14Z Modeling of electron transport in sub-100 nm channel length silicon MOSFETs Jacobs, Jarvis Benjamin Dimitri Antoniadis Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. Includes bibliographical references (p. 216). by Jarvis B. Jacobs. Ph.D. 2005-08-17T18:20:10Z 2005-08-17T18:20:10Z 1995 1995 Thesis http://hdl.handle.net/1721.1/11414 33227898 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 216 p. 11272228 bytes 11271983 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science Jacobs, Jarvis Benjamin Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title | Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title_full | Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title_fullStr | Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title_full_unstemmed | Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title_short | Modeling of electron transport in sub-100 nm channel length silicon MOSFETs |
| title_sort | modeling of electron transport in sub 100 nm channel length silicon mosfets |
| topic | Electrical Engineering and Computer Science |
| url | http://hdl.handle.net/1721.1/11414 |
| work_keys_str_mv | AT jacobsjarvisbenjamin modelingofelectrontransportinsub100nmchannellengthsiliconmosfets |