Modeling of electron transport in sub-100 nm channel length silicon MOSFETs

Modeling of electron transport in sub-100 nm channel length silicon MOSFETs

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.

Bibliographic Details
Main Author:	Jacobs, Jarvis Benjamin
Other Authors:	Dimitri Antoniadis
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2005
Subjects:	Electrical Engineering and Computer Science
Online Access:	http://hdl.handle.net/1721.1/11414

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