Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optic...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/114247 https://orcid.org/0000-0002-8104-9097 |
| _version_ | 1826204193436729344 |
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| author | Uedono, Akira Fujishima, Tatsuya Piedra, Daniel Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Uedono, Akira Fujishima, Tatsuya Piedra, Daniel Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás |
| author_sort | Uedono, Akira |
| collection | MIT |
| description | Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optically active vacancy-type defects were introduced below the Ti/GaN interface after annealing at 800 °C. Charge transition of those defects due to electron capture was observed and was found to correlate with a yellow band in the photoluminescence spectrum. The major defect species was identified as vacancy clusters such as three to five Ga-vacancies coupled with multiple nitrogen-vacancies. The annealing behaviors of vacancy-type defects in Ti-, Ni-, and Pt-deposited GaN were also examined. |
| first_indexed | 2024-09-23T12:50:22Z |
| format | Article |
| id | mit-1721.1/114247 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:50:22Z |
| publishDate | 2018 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1142472022-10-01T11:28:24Z Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam Uedono, Akira Fujishima, Tatsuya Piedra, Daniel Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Palacios, Tomas Fujishima, Tatsuya Piedra, Daniel Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optically active vacancy-type defects were introduced below the Ti/GaN interface after annealing at 800 °C. Charge transition of those defects due to electron capture was observed and was found to correlate with a yellow band in the photoluminescence spectrum. The major defect species was identified as vacancy clusters such as three to five Ga-vacancies coupled with multiple nitrogen-vacancies. The annealing behaviors of vacancy-type defects in Ti-, Ni-, and Pt-deposited GaN were also examined. 2018-03-21T15:37:04Z 2018-03-21T15:37:04Z 2014-08 2014-06 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/114247 Uedono, Akira et al. “Annealing Behaviors of Vacancy-Type Defects Near Interfaces Between Metal Contacts and GaN Probed Using a Monoenergetic Positron Beam.” Applied Physics Letters 105, 5 (August 2014): 052108 © AIP Publishing LLC https://orcid.org/0000-0002-8104-9097 en_US https://doi.org/10.1063/1.4892834 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Baylon |
| spellingShingle | Uedono, Akira Fujishima, Tatsuya Piedra, Daniel Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title | Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title_full | Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title_fullStr | Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title_full_unstemmed | Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title_short | Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam |
| title_sort | annealing behaviors of vacancy type defects near interfaces between metal contacts and gan probed using a monoenergetic positron beam |
| url | http://hdl.handle.net/1721.1/114247 https://orcid.org/0000-0002-8104-9097 |
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