Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optic...

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Bibliographic Details
Main Authors: Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2018
Online Access:http://hdl.handle.net/1721.1/114247
https://orcid.org/0000-0002-8104-9097

Internet

http://hdl.handle.net/1721.1/114247
https://orcid.org/0000-0002-8104-9097

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