NV-based quantum memories coupled to photonic integrated circuits

The negatively charged nitrogen vacancy (NV) center in diamond is a promising solid-state quantum memory. However, developing networks comprising such quantum memories is limited by the fabrication yield of the quantum nodes and the collection efficiency of indistinguishable photons. In this letter,...

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Main Authors: Mouradian, Sara L, Schroder, Tim, Zheng, Jiabao, Lu, Tsung-Ju Jeff, Choi, Hyeongrak, Wan, Noel Heng Loon, Walsh, Michael E, Bersin, Eric Alexander, Englund, Dirk R.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: SPIE 2018
Online Access:http://hdl.handle.net/1721.1/114455
https://orcid.org/0000-0002-4900-741X
https://orcid.org/0000-0001-9017-0254
https://orcid.org/0000-0003-2099-7015
https://orcid.org/0000-0002-8644-9401
https://orcid.org/0000-0001-6791-5377
https://orcid.org/0000-0003-0643-5534
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author Mouradian, Sara L
Schroder, Tim
Zheng, Jiabao
Lu, Tsung-Ju Jeff
Choi, Hyeongrak
Wan, Noel Heng Loon
Walsh, Michael E
Bersin, Eric Alexander
Englund, Dirk R.
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Mouradian, Sara L
Schroder, Tim
Zheng, Jiabao
Lu, Tsung-Ju Jeff
Choi, Hyeongrak
Wan, Noel Heng Loon
Walsh, Michael E
Bersin, Eric Alexander
Englund, Dirk R.
author_sort Mouradian, Sara L
collection MIT
description The negatively charged nitrogen vacancy (NV) center in diamond is a promising solid-state quantum memory. However, developing networks comprising such quantum memories is limited by the fabrication yield of the quantum nodes and the collection efficiency of indistinguishable photons. In this letter, we report on advances on a hybrid quantum system that allows for scalable production of networks, even with low-yield node fabrication. Moreover, an NV center in a simple single mode diamond waveguide is shown in simulation and experiment to couple well to a single mode SiN waveguide with a simple adiabatic taper for optimal mode transfer. In addition, cavity enhancement of the zero phonon line of the NV center with a resonance coupled to the waveguide mode allows a simulated < 1800 fold increase in the collection of photon states coherent with the state of the NV center into a single frequency and spatial mode.
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spelling mit-1721.1/1144552022-09-28T13:47:21Z NV-based quantum memories coupled to photonic integrated circuits Mouradian, Sara L Schroder, Tim Zheng, Jiabao Lu, Tsung-Ju Jeff Choi, Hyeongrak Wan, Noel Heng Loon Walsh, Michael E Bersin, Eric Alexander Englund, Dirk R. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Research Laboratory of Electronics Mouradian, Sara L Schroder, Tim Zheng, Jiabao Lu, Tsung-Ju Jeff Choi, Hyeongrak Wan, Noel Heng Loon Walsh, Michael E Bersin, Eric Alexander Englund, Dirk R. The negatively charged nitrogen vacancy (NV) center in diamond is a promising solid-state quantum memory. However, developing networks comprising such quantum memories is limited by the fabrication yield of the quantum nodes and the collection efficiency of indistinguishable photons. In this letter, we report on advances on a hybrid quantum system that allows for scalable production of networks, even with low-yield node fabrication. Moreover, an NV center in a simple single mode diamond waveguide is shown in simulation and experiment to couple well to a single mode SiN waveguide with a simple adiabatic taper for optimal mode transfer. In addition, cavity enhancement of the zero phonon line of the NV center with a resonance coupled to the waveguide mode allows a simulated < 1800 fold increase in the collection of photon states coherent with the state of the NV center into a single frequency and spatial mode. United States. Air Force. Office of Scientific Research (Grant FA9550-11-1-0014) U.S. Army Research Laboratory. Center for Distributed Quantum Information (FA9550-14-1-0052) 2018-03-29T18:23:00Z 2018-03-29T18:23:00Z 2016-09 2018-03-16T16:15:36Z Article http://purl.org/eprint/type/ConferencePaper http://hdl.handle.net/1721.1/114455 Mouradian, Sara, et al. "NV-Based Quantum Memories Coupled to Photonic Integrated Circuits." 28 August - September 1, 2016, San Diego, California, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou, SPIE, 2016, p. 992014. © 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) https://orcid.org/0000-0002-4900-741X https://orcid.org/0000-0001-9017-0254 https://orcid.org/0000-0003-2099-7015 https://orcid.org/0000-0002-8644-9401 https://orcid.org/0000-0001-6791-5377 https://orcid.org/0000-0003-0643-5534 http://dx.doi.org/10.1117/12.2236329 SPIE Proceedings Volume 9920, Active Photonic Materials VIII Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE
spellingShingle Mouradian, Sara L
Schroder, Tim
Zheng, Jiabao
Lu, Tsung-Ju Jeff
Choi, Hyeongrak
Wan, Noel Heng Loon
Walsh, Michael E
Bersin, Eric Alexander
Englund, Dirk R.
NV-based quantum memories coupled to photonic integrated circuits
title NV-based quantum memories coupled to photonic integrated circuits
title_full NV-based quantum memories coupled to photonic integrated circuits
title_fullStr NV-based quantum memories coupled to photonic integrated circuits
title_full_unstemmed NV-based quantum memories coupled to photonic integrated circuits
title_short NV-based quantum memories coupled to photonic integrated circuits
title_sort nv based quantum memories coupled to photonic integrated circuits
url http://hdl.handle.net/1721.1/114455
https://orcid.org/0000-0002-4900-741X
https://orcid.org/0000-0001-9017-0254
https://orcid.org/0000-0003-2099-7015
https://orcid.org/0000-0002-8644-9401
https://orcid.org/0000-0001-6791-5377
https://orcid.org/0000-0003-0643-5534
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