Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well
Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by...
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Language: | English |
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American Physical Society
2018
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Online Access: | http://hdl.handle.net/1721.1/114762 https://orcid.org/0000-0003-1059-065X |
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author | Anghel, S. Passmann, F. Ruppert, C. Poshakinskiy, A. V. Tarasenko, S. A. Moore, J. N. Yusa, G. Mano, T. Noda, T. Li, X. Bristow, A. D. Betz, M. Singh, Akshay k |
author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Anghel, S. Passmann, F. Ruppert, C. Poshakinskiy, A. V. Tarasenko, S. A. Moore, J. N. Yusa, G. Mano, T. Noda, T. Li, X. Bristow, A. D. Betz, M. Singh, Akshay k |
author_sort | Anghel, S. |
collection | MIT |
description | Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λ[subscript SOI] is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λ[subscript SOI] through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λ[subscript SOI] and diffusion coefficient. |
first_indexed | 2024-09-23T13:20:51Z |
format | Article |
id | mit-1721.1/114762 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T13:20:51Z |
publishDate | 2018 |
publisher | American Physical Society |
record_format | dspace |
spelling | mit-1721.1/1147622022-09-28T13:33:59Z Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well Anghel, S. Passmann, F. Ruppert, C. Poshakinskiy, A. V. Tarasenko, S. A. Moore, J. N. Yusa, G. Mano, T. Noda, T. Li, X. Bristow, A. D. Betz, M. Singh, Akshay k Massachusetts Institute of Technology. Department of Materials Science and Engineering Singh, Akshay k Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λ[subscript SOI] is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λ[subscript SOI] through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λ[subscript SOI] and diffusion coefficient. 2018-04-17T17:57:19Z 2018-04-17T17:57:19Z 2018-03 2017-11 2018-03-15T18:00:59Z Article http://purl.org/eprint/type/JournalArticle 2469-9950 2469-9969 http://hdl.handle.net/1721.1/114762 Anghel, S. et al. "Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well." Physical Review B 97, 12 (March 2018): 125410 © 2018 American Physical Society https://orcid.org/0000-0003-1059-065X en http://dx.doi.org/10.1103/PhysRevB.97.125410 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
spellingShingle | Anghel, S. Passmann, F. Ruppert, C. Poshakinskiy, A. V. Tarasenko, S. A. Moore, J. N. Yusa, G. Mano, T. Noda, T. Li, X. Bristow, A. D. Betz, M. Singh, Akshay k Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title | Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title_full | Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title_fullStr | Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title_full_unstemmed | Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title_short | Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well |
title_sort | field control of anisotropic spin transport and spin helix dynamics in a modulation doped gaas quantum well |
url | http://hdl.handle.net/1721.1/114762 https://orcid.org/0000-0003-1059-065X |
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