Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg
Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mech...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
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National Academy of Sciences (U.S.)
2018
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| Online Access: | http://hdl.handle.net/1721.1/114890 https://orcid.org/0000-0002-9872-5688 |
| _version_ | 1826211882714791936 |
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| author | Mao, Jun Shuai, Jing Song, Shaowei Wu, Yixuan Dally, Rebecca Zhou, Jiawei Liu, Zihang Sun, Jifeng Zhang, Qinyong dela Cruz, Clarina Wilson, Stephen Pei, Yanzhong Singh, David J. Chen, Gang Chu, Ching-Wu Ren, Zhifeng |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Mao, Jun Shuai, Jing Song, Shaowei Wu, Yixuan Dally, Rebecca Zhou, Jiawei Liu, Zihang Sun, Jifeng Zhang, Qinyong dela Cruz, Clarina Wilson, Stephen Pei, Yanzhong Singh, David J. Chen, Gang Chu, Ching-Wu Ren, Zhifeng |
| author_sort | Mao, Jun |
| collection | MIT |
| description | Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg[subscript 3]Sb[subscript 2 ]-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg[subscript 3.2]Sb[subscript 1.5]Bi[subscript 0.49]Te [subscript 0.01], where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm 2 ·V[superscript −1]·s[superscript − 1] is obtained, thus leading to a notably enhanced power factor of ∼13 μW·cm [superscript −1]·K [superscript −2] from ∼5 μW·cm[superscript −1]·K[superscript −2]. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg[subscript 3.1]Co[subscript 0.1]Sb[subscript 1.5]Bi[subscript 0.49]Te [subscript 0.01]. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems. Keywords: thermoelectric; carrier scattering mechanism; ionized impurity scattering; n-type; Mg[subscript 3]Sb[subscript 2]; defects |
| first_indexed | 2024-09-23T15:12:56Z |
| format | Article |
| id | mit-1721.1/114890 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T15:12:56Z |
| publishDate | 2018 |
| publisher | National Academy of Sciences (U.S.) |
| record_format | dspace |
| spelling | mit-1721.1/1148902022-09-29T13:27:14Z Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg Mao, Jun Shuai, Jing Song, Shaowei Wu, Yixuan Dally, Rebecca Zhou, Jiawei Liu, Zihang Sun, Jifeng Zhang, Qinyong dela Cruz, Clarina Wilson, Stephen Pei, Yanzhong Singh, David J. Chen, Gang Chu, Ching-Wu Ren, Zhifeng Massachusetts Institute of Technology. Department of Mechanical Engineering Zhou, Jiawei Chu, Ching-Wu Ren, Zhifeng Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg[subscript 3]Sb[subscript 2 ]-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg[subscript 3.2]Sb[subscript 1.5]Bi[subscript 0.49]Te [subscript 0.01], where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm 2 ·V[superscript −1]·s[superscript − 1] is obtained, thus leading to a notably enhanced power factor of ∼13 μW·cm [superscript −1]·K [superscript −2] from ∼5 μW·cm[superscript −1]·K[superscript −2]. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg[subscript 3.1]Co[subscript 0.1]Sb[subscript 1.5]Bi[subscript 0.49]Te [subscript 0.01]. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems. Keywords: thermoelectric; carrier scattering mechanism; ionized impurity scattering; n-type; Mg[subscript 3]Sb[subscript 2]; defects 2018-04-23T18:45:37Z 2018-04-23T18:45:37Z 2017-09 2017-07 2018-04-20T14:00:13Z Article http://purl.org/eprint/type/ConferencePaper 0027-8424 1091-6490 http://hdl.handle.net/1721.1/114890 Mao, Jun et al. “Manipulation of Ionized Impurity Scattering for Achieving High Thermoelectric Performance in n-Type Mg3Sb2-Based Materials.” Proceedings of the National Academy of Sciences 114, 40 (September 2017): 10548–10553 © 2017 The Authors https://orcid.org/0000-0002-9872-5688 http://dx.doi.org/10.1073/PNAS.1711725114 Proceedings of the National Academy of Sciences Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf National Academy of Sciences (U.S.) National Academy of Sciences |
| spellingShingle | Mao, Jun Shuai, Jing Song, Shaowei Wu, Yixuan Dally, Rebecca Zhou, Jiawei Liu, Zihang Sun, Jifeng Zhang, Qinyong dela Cruz, Clarina Wilson, Stephen Pei, Yanzhong Singh, David J. Chen, Gang Chu, Ching-Wu Ren, Zhifeng Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title | Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title_full | Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title_fullStr | Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title_full_unstemmed | Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title_short | Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg |
| title_sort | manipulation of ionized impurity scattering for achieving high thermoelectric performance in n type mg |
| url | http://hdl.handle.net/1721.1/114890 https://orcid.org/0000-0002-9872-5688 |
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