Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg

Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg

Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mech...

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Bibliographic Details
Main Authors: Mao, Jun, Shuai, Jing, Song, Shaowei, Wu, Yixuan, Dally, Rebecca, Zhou, Jiawei, Liu, Zihang, Sun, Jifeng, Zhang, Qinyong, dela Cruz, Clarina, Wilson, Stephen, Pei, Yanzhong, Singh, David J., Chen, Gang, Chu, Ching-Wu, Ren, Zhifeng
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: National Academy of Sciences (U.S.) 2018
Online Access:http://hdl.handle.net/1721.1/114890
https://orcid.org/0000-0002-9872-5688

Internet

http://hdl.handle.net/1721.1/114890
https://orcid.org/0000-0002-9872-5688

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