Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1×10[superscript 20...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2018
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| Online Access: | http://hdl.handle.net/1721.1/115535 https://orcid.org/0000-0003-2239-6192 |
| _version_ | 1811078015401066496 |
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| author | Yang, W. Akey, A. J. Smillie, L. A. Johnson, B. C. McCallum, J. C. Macdonald, D. Aziz, M. J. Williams, J. S. Mailoa, Jonathan P Buonassisi, T. |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Yang, W. Akey, A. J. Smillie, L. A. Johnson, B. C. McCallum, J. C. Macdonald, D. Aziz, M. J. Williams, J. S. Mailoa, Jonathan P Buonassisi, T. |
| author_sort | Yang, W. |
| collection | MIT |
| description | Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1×10[superscript 20] cm[superscript −3]) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as ∼3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics. |
| first_indexed | 2024-09-23T10:52:03Z |
| format | Article |
| id | mit-1721.1/115535 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:52:03Z |
| publishDate | 2018 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/1155352022-09-27T15:35:39Z Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si Yang, W. Akey, A. J. Smillie, L. A. Johnson, B. C. McCallum, J. C. Macdonald, D. Aziz, M. J. Williams, J. S. Mailoa, Jonathan P Buonassisi, T. Massachusetts Institute of Technology. Department of Physics Mailoa, Jonathan P Buonassisi, T. Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1×10[superscript 20] cm[superscript −3]) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as ∼3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics. 2018-05-21T14:50:32Z 2018-05-21T14:50:32Z 2017-12 2017-04 2017-12-22T18:00:24Z Article http://purl.org/eprint/type/JournalArticle 2475-9953 http://hdl.handle.net/1721.1/115535 Yang, W. et al. "Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si." Physical Review Materials 1, 7 (December 2017): 074602 © 2017 American Physical Society https://orcid.org/0000-0003-2239-6192 en http://dx.doi.org/10.1103/PhysRevMaterials.1.074602 Physical Review Materials Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Yang, W. Akey, A. J. Smillie, L. A. Johnson, B. C. McCallum, J. C. Macdonald, D. Aziz, M. J. Williams, J. S. Mailoa, Jonathan P Buonassisi, T. Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title | Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title_full | Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title_fullStr | Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title_full_unstemmed | Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title_short | Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si |
| title_sort | au rich filamentary behavior and associated subband gap optical absorption in hyperdoped si |
| url | http://hdl.handle.net/1721.1/115535 https://orcid.org/0000-0003-2239-6192 |
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