Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer funct...
| Main Authors: | , , |
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| Format: | Article |
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MDPI AG
2018
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| Online Access: | http://hdl.handle.net/1721.1/115552 https://orcid.org/0000-0001-8413-5583 https://orcid.org/0000-0002-6572-3432 https://orcid.org/0000-0002-2190-563X |
| Summary: | This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. |
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