Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer funct...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
MDPI AG
2018
|
| Online Access: | http://hdl.handle.net/1721.1/115552 https://orcid.org/0000-0001-8413-5583 https://orcid.org/0000-0002-6572-3432 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1826205052755247104 |
|---|---|
| author | Mackin, Charles Edward McVay, Elaine D. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Mackin, Charles Edward McVay, Elaine D. Palacios, Tomas |
| author_sort | Mackin, Charles Edward |
| collection | MIT |
| description | This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. |
| first_indexed | 2024-09-23T13:06:00Z |
| format | Article |
| id | mit-1721.1/115552 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T13:06:00Z |
| publishDate | 2018 |
| publisher | MDPI AG |
| record_format | dspace |
| spelling | mit-1721.1/1155522022-09-28T12:01:37Z Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors Mackin, Charles Edward McVay, Elaine D. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Mackin, Charles Edward McVay, Elaine D. Palacios, Tomas This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. United States. Office of Naval Research (Grant N00014-12-1-0959) United States. Office of Naval Research (Grant N0014-16-1-2230) United States. National Aeronautics and Space Administration (Award NNX14AH11A) United States. Army Research Office (Contract W911NF-13-D-0001) 2018-05-21T19:49:37Z 2018-05-21T19:49:37Z 2018-02 2018-01 2018-05-11T13:17:11Z Article http://purl.org/eprint/type/JournalArticle 1424-8220 http://hdl.handle.net/1721.1/115552 “Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors.” Sensors 18, 2 (February 2018): 494 © 2018 The Authors https://orcid.org/0000-0001-8413-5583 https://orcid.org/0000-0002-6572-3432 https://orcid.org/0000-0002-2190-563X http://dx.doi.org/10.3390/s18020494 Sensors Attribution 4.0 International (CC BY 4.0) https://creativecommons.org/licenses/by/4.0/ application/pdf MDPI AG Diversity |
| spellingShingle | Mackin, Charles Edward McVay, Elaine D. Palacios, Tomas Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title | Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title_full | Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title_fullStr | Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title_full_unstemmed | Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title_short | Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors |
| title_sort | frequency response of graphene electrolyte gated field effect transistors |
| url | http://hdl.handle.net/1721.1/115552 https://orcid.org/0000-0001-8413-5583 https://orcid.org/0000-0002-6572-3432 https://orcid.org/0000-0002-2190-563X |
| work_keys_str_mv | AT mackincharlesedward frequencyresponseofgrapheneelectrolytegatedfieldeffecttransistors AT mcvayelained frequencyresponseofgrapheneelectrolytegatedfieldeffecttransistors AT palaciostomas frequencyresponseofgrapheneelectrolytegatedfieldeffecttransistors |