Electronic structure and light emission from erbium centers in silicon
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1995.
Yazar: | Gan, Fanqi, 1967- |
---|---|
Diğer Yazarlar: | Lionel C. Kimerling. |
Materyal Türü: | Tez |
Dil: | eng |
Baskı/Yayın Bilgisi: |
Massachusetts Institute of Technology
2005
|
Konular: | |
Online Erişim: | http://hdl.handle.net/1721.1/11592 |
Benzer Materyaller
-
Defect characterization of erbium doped silicon light emitting diodes
Yazar:: Gupta, Rita, 1970-
Baskı/Yayın Bilgisi: (2005) -
Development of silicon nanostructures as light emitter and sensitizer for erbium emission
Yazar:: Silalahi, Samson Tua Halomoan
Baskı/Yayın Bilgisi: (2010) -
Process integration of erbium-doped silicon light-emitting diodes and MOSFETs
Yazar:: Zheng, Bo
Baskı/Yayın Bilgisi: (2005) -
Erbium-ytterbium-yttrium compounds for light emission at 1.54[mu]m
Yazar:: Vanhoutte, Michiel
Baskı/Yayın Bilgisi: (2013) -
Erbium doped silicon as an optoelectronic semiconductor material
Yazar:: Ren, Yong-Gang Frank
Baskı/Yayın Bilgisi: (2007)