Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs
MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/1721.1/116103 https://orcid.org/0000-0002-2190-563X |
| Summary: | MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching 10 amperes of current, with a current breakdown target of 3000 volts. This paper presents an update on the progress of this multi-year development project against these on-state current handling, reverse leakage and breakdown goals. |
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