CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)
Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need ann...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116106 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811084761285787648 |
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| author | Liu, Zhihong Heuken, Michael Fahle, Dirk Ng, G. I. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Liu, Zhihong Heuken, Michael Fahle, Dirk Ng, G. I. Palacios, Tomas |
| author_sort | Liu, Zhihong |
| collection | MIT |
| description | Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need annealing at > 800°C. In the past, we have reported an approach to realize low contact resistance (R[subscript C]) using CMOS-compatible metal schemes annealed at 500°C through an n[superscript +]-GaN/n-AlGaN/GaN structure [4]. This method has a drawback that the n-doped AlGaN barrier increases the gate leakage current. In this work, we present the first low temperature (< 450°C) CMOS-compatible Ti/Al ohmic contact technology for conventional unintentionally-doped AlGaN/AlN/GaN HEMT structures. |
| first_indexed | 2024-09-23T12:57:10Z |
| format | Article |
| id | mit-1721.1/116106 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:57:10Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1161062022-10-01T12:07:43Z CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) Liu, Zhihong Heuken, Michael Fahle, Dirk Ng, G. I. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Singapore-MIT Alliance in Research and Technology (SMART) Palacios, Tomas Palacios, Tomas Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need annealing at > 800°C. In the past, we have reported an approach to realize low contact resistance (R[subscript C]) using CMOS-compatible metal schemes annealed at 500°C through an n[superscript +]-GaN/n-AlGaN/GaN structure [4]. This method has a drawback that the n-doped AlGaN barrier increases the gate leakage current. In this work, we present the first low temperature (< 450°C) CMOS-compatible Ti/Al ohmic contact technology for conventional unintentionally-doped AlGaN/AlN/GaN HEMT structures. Singapore-MIT Alliance for Research and Technology (SMART) 2018-06-05T17:40:07Z 2018-06-05T17:40:07Z 2014-08 2014-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4799-5406-3 978-1-4799-5405-6 http://hdl.handle.net/1721.1/116106 Liu, Zhihong, et al. "CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)." 2014 72nd Device Research Conference, 22-25 June, 2014, Santa Barbara, California, IEEE, 2014, pp. 75–76. https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/DRC.2014.6872304 2014 72nd Device Research Conference Creative Commons Attribution-NoDerivatives http://creativecommons.org/licenses/by-nc-sa/3.0 application/pdf Institute of Electrical and Electronics Engineers (IEEE) Baylon |
| spellingShingle | Liu, Zhihong Heuken, Michael Fahle, Dirk Ng, G. I. Palacios, Tomas CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title | CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title_full | CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title_fullStr | CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title_full_unstemmed | CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title_short | CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C) |
| title_sort | cmos compatible ti al ohmic contacts rc 0 3 ω mm for u algan aln gan hemts by low temperature annealing 450 °c |
| url | http://hdl.handle.net/1721.1/116106 https://orcid.org/0000-0002-2190-563X |
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