CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)
Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need ann...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116106 https://orcid.org/0000-0002-2190-563X |