Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
This paper demonstrates the compensation of the intrinsic positive charges in Al₂O₃ gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomi...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116161 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0003-3081-6425 https://orcid.org/0000-0002-2190-563X |