Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Emulation of neural networks by redox-based Resistive Random Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards...

সম্পূর্ণ বিবরণ

গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Valov, Ilia, Ielmini, Daniele, Rupp, Jennifer L. M., Rupp, Jennifer Lilia Marguerite
অন্যান্য লেখক: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
বিন্যাস: প্রবন্ধ
ভাষা:English
প্রকাশিত: Springer-Verlag 2018
অনলাইন ব্যবহার করুন:http://hdl.handle.net/1721.1/116232