Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Emulation of neural networks by redox-based Resistive Random Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards...

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Bibliographic Details
Main Authors: Valov, Ilia, Ielmini, Daniele, Rupp, Jennifer L. M., Rupp, Jennifer Lilia Marguerite
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: Springer-Verlag 2018
Online Access:http://hdl.handle.net/1721.1/116232

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