Towards on-chip spectroscopy based on a single microresonator

Frequency comb generation in the mid-infrared (mid-IR)region is attractive recently. Here, we propose the Ge-on-Si microresonator for power-efficient frequency comb generation in the mid-IR. An octave-spanning comb can be obtained with power reduced to 190 mW. The robustness of the frequency comb ge...

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Detalhes bibliográficos
Principais autores: Zhang, Lin, Li, Guifang, Wang, Jing, Guo, Yuhao, Michel, Jurgen, Han, Zhaohong, Kimerling, Lionel C, Agarwal, Anuradha
Outros Autores: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Formato: Artigo
Publicado em: SPIE 2018
Acesso em linha:http://hdl.handle.net/1721.1/116482
https://orcid.org/0000-0003-2954-8005
https://orcid.org/0000-0002-3913-6189
Descrição
Resumo:Frequency comb generation in the mid-infrared (mid-IR)region is attractive recently. Here, we propose the Ge-on-Si microresonator for power-efficient frequency comb generation in the mid-IR. An octave-spanning comb can be obtained with power reduced to 190 mW. The robustness of the frequency comb generation with localized spectral loss is also analyzed. Based on the analysis, we propose a novel architecture of on-chip spectroscopy systems in the mid-IR.