Design space and origin of off-state leakage in GaN vertical power diodes
Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after care...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116662 https://orcid.org/0000-0003-3081-6425 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0001-5777-8364 |
| Summary: | Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices. |
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