Design space and origin of off-state leakage in GaN vertical power diodes
Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after care...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116662 https://orcid.org/0000-0003-3081-6425 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0001-5777-8364 |
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| author | Wong, H.-Y. Braga, N. A. Mickevicius, R. V. Jayanta Joglekar, Sameer Palacios, Tomas Sun, Min Zhang, Yuhao Yu, Lili |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Wong, H.-Y. Braga, N. A. Mickevicius, R. V. Jayanta Joglekar, Sameer Palacios, Tomas Sun, Min Zhang, Yuhao Yu, Lili |
| author_sort | Wong, H.-Y. |
| collection | MIT |
| description | Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices. |
| first_indexed | 2024-09-23T10:24:29Z |
| format | Article |
| id | mit-1721.1/116662 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:24:29Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1166622022-09-26T17:41:46Z Design space and origin of off-state leakage in GaN vertical power diodes Wong, H.-Y. Braga, N. A. Mickevicius, R. V. Jayanta Joglekar, Sameer Palacios, Tomas Sun, Min Zhang, Yuhao Yu, Lili Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microsystems Technology Laboratories Zhang, Yuhao Jayanta Joglekar, Sameer Palacios, Tomas Sun, Min Zhang, Yuhao Yu, Lili Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices. United States. Advanced Research Projects Agency-Energy MIT Energy Initiative 2018-06-27T17:14:42Z 2018-06-27T17:14:42Z 2016-02 2015-12 Article http://purl.org/eprint/type/JournalArticle 978-1-4673-9894-7 http://hdl.handle.net/1721.1/116662 Zhang, Y. et al. “Design Space and Origin of Off-State Leakage in GaN Vertical Power Diodes.” 2015 IEEE International Electron Devices Meeting (IEDM), 7-9 December 2015, Washington, DC, IEEE, 2015. https://orcid.org/0000-0003-3081-6425 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0001-5777-8364 en_US http://dx.doi.org/10.1109/IEDM.2015.7409830 2015 IEEE International Electron Devices Meeting (IEDM) application/pdf Institute of Electrical and Electronics Engineers (IEEE) |
| spellingShingle | Wong, H.-Y. Braga, N. A. Mickevicius, R. V. Jayanta Joglekar, Sameer Palacios, Tomas Sun, Min Zhang, Yuhao Yu, Lili Design space and origin of off-state leakage in GaN vertical power diodes |
| title | Design space and origin of off-state leakage in GaN vertical power diodes |
| title_full | Design space and origin of off-state leakage in GaN vertical power diodes |
| title_fullStr | Design space and origin of off-state leakage in GaN vertical power diodes |
| title_full_unstemmed | Design space and origin of off-state leakage in GaN vertical power diodes |
| title_short | Design space and origin of off-state leakage in GaN vertical power diodes |
| title_sort | design space and origin of off state leakage in gan vertical power diodes |
| url | http://hdl.handle.net/1721.1/116662 https://orcid.org/0000-0003-3081-6425 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0001-5777-8364 |
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