Heavy p-type carbon doping of MOCVD GaAsP using CBrCl₃
CBrCl₃ is shown to be a useful precursor for heavy p-type carbon doping of GaAsxP1−x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl3 decreas...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Elsevier
2018
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| Online Access: | http://hdl.handle.net/1721.1/116757 https://orcid.org/0000-0002-2429-8943 https://orcid.org/0000-0002-1891-1959 |
| Summary: | CBrCl₃ is shown to be a useful precursor for heavy p-type carbon doping of GaAsxP1−x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl3 decreased the growth rate of GaAsP by up to 32% and decreases x by up to 0.025. The dependence of these effects on precursor inputs is investigated, allowing C-doped GaAsP films to be grown with good thickness and compositional control. Hole concentrations of greater than 2×10¹⁹ cm−3 were measured for values of x from 0.76 to 0.90. |
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