Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

We combine low energy muon spin rotation (LE-μSR) and soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)[subscript 2]Te[subscript 3]. We find that one achieves a full magnetic volume fr...

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Bibliographic Details
Main Authors: Krieger, J. A., Husanu, M.-A., Sostina, D., Ernst, A., Otrokov, M. M., Prokscha, T., Schmitt, T., Suter, A., Vergniory, M. G., Chulkov, E. V., Strocov, V. N., Salman, Z., Chang, Cui-zu, Moodera, Jagadeesh
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:English
Published: American Physical Society 2018
Online Access:http://hdl.handle.net/1721.1/117039
https://orcid.org/0000-0001-7413-5715
https://orcid.org/0000-0002-2480-1211
Description
Summary:We combine low energy muon spin rotation (LE-μSR) and soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)[subscript 2]Te[subscript 3]. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)[subscript x](Bi,Sb)[subscript 2−x]Te[subscript 3] at doping levels x≳0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V L[subscript 3] edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.