High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed,...
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American Chemical Society (ACS)
2018
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| Online Access: | http://hdl.handle.net/1721.1/117765 https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0002-6404-7735 https://orcid.org/0000-0003-0308-3262 |
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| author | Gao, Yuanda Gan, Xuetao Meric, Inanc Wang, Lei Szep, Attila Walker, Dennis Hone, James Shiue, Ren-Jye Li, Luozhou Peng, Cheng Englund, Dirk R. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gao, Yuanda Gan, Xuetao Meric, Inanc Wang, Lei Szep, Attila Walker, Dennis Hone, James Shiue, Ren-Jye Li, Luozhou Peng, Cheng Englund, Dirk R. |
| author_sort | Gao, Yuanda |
| collection | MIT |
| description | Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz. Keywords: boron nitride; electro-optic modulator; graphene; Optoelectronics; photonic crystal |
| first_indexed | 2024-09-23T12:46:51Z |
| format | Article |
| id | mit-1721.1/117765 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T12:46:51Z |
| publishDate | 2018 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1177652022-09-28T09:59:56Z High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity Gao, Yuanda Gan, Xuetao Meric, Inanc Wang, Lei Szep, Attila Walker, Dennis Hone, James Shiue, Ren-Jye Li, Luozhou Peng, Cheng Englund, Dirk R. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Shiue, Ren-Jye Li, Luozhou Peng, Cheng Englund, Dirk R. Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz. Keywords: boron nitride; electro-optic modulator; graphene; Optoelectronics; photonic crystal United States. Office of Naval Research (Award N00014-13-1-0662) United States. Office of Naval Research (Award N00014-14-1-0349) United States. Department of Energy. Office of Basic Energy Sciences (Contract DE-AC02-98CH10886) 2018-09-14T18:50:32Z 2018-09-14T18:50:32Z 2015-03 2014-12 2018-09-14T17:08:05Z Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/117765 Gao, Yuanda et al. “High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity.” Nano Letters 15, 3 (March 2015): 2001–2005 © 2015 American Chemical Society https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0002-6404-7735 https://orcid.org/0000-0003-0308-3262 http://dx.doi.org/10.1021/NL504860Z Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) arXiv |
| spellingShingle | Gao, Yuanda Gan, Xuetao Meric, Inanc Wang, Lei Szep, Attila Walker, Dennis Hone, James Shiue, Ren-Jye Li, Luozhou Peng, Cheng Englund, Dirk R. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title | High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title_full | High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title_fullStr | High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title_full_unstemmed | High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title_short | High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity |
| title_sort | high speed electro optic modulator integrated with graphene boron nitride heterostructure and photonic crystal nanocavity |
| url | http://hdl.handle.net/1721.1/117765 https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0002-6404-7735 https://orcid.org/0000-0003-0308-3262 |
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