Non-monotonic effect of growth temperature on carrier collection in SnS solar cells
We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
AIP Publishing
2018
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| Online Access: | http://hdl.handle.net/1721.1/118303 https://orcid.org/0000-0002-7043-5048 https://orcid.org/0000-0001-6715-5195 https://orcid.org/0000-0002-3491-8341 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0002-6616-9867 https://orcid.org/0000-0003-3116-6719 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0002-8723-8024 https://orcid.org/0000-0001-8345-4937 |
| Summary: | We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation. |
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