High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment
Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption.We demonstrate that the key to ad...
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| Format: | Article |
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American Association for the Advancement of Science (AAAS)
2018
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| Online Access: | http://hdl.handle.net/1721.1/118423 https://orcid.org/0000-0002-0388-8311 https://orcid.org/0000-0002-2805-3353 https://orcid.org/0000-0003-2609-4204 https://orcid.org/0000-0002-1262-1264 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-6127-1056 |
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| author | Wang, Xiaoxue Zhang, Xu Sun, Lei Lee, Dongwook Lee, Sunghwan Wang, Minghui Zhao, Junjie Shao-Horn, Yang Dinca, Mircea Palacios, Tomas Gleason, Karen K |
| author2 | Massachusetts Institute of Technology. Department of Chemical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Chemical Engineering Wang, Xiaoxue Zhang, Xu Sun, Lei Lee, Dongwook Lee, Sunghwan Wang, Minghui Zhao, Junjie Shao-Horn, Yang Dinca, Mircea Palacios, Tomas Gleason, Karen K |
| author_sort | Wang, Xiaoxue |
| collection | MIT |
| description | Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption.We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm2V-1s-1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56MHzfor radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport. |
| first_indexed | 2024-09-23T15:04:15Z |
| format | Article |
| id | mit-1721.1/118423 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T15:04:15Z |
| publishDate | 2018 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | dspace |
| spelling | mit-1721.1/1184232022-10-02T00:23:49Z High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment Wang, Xiaoxue Zhang, Xu Sun, Lei Lee, Dongwook Lee, Sunghwan Wang, Minghui Zhao, Junjie Shao-Horn, Yang Dinca, Mircea Palacios, Tomas Gleason, Karen K Massachusetts Institute of Technology. Department of Chemical Engineering Massachusetts Institute of Technology. Department of Chemistry Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Mechanical Engineering Wang, Xiaoxue Zhang, Xu Sun, Lei Lee, Dongwook Lee, Sunghwan Wang, Minghui Zhao, Junjie Shao-Horn, Yang Dinca, Mircea Palacios, Tomas Gleason, Karen K Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption.We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm2V-1s-1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56MHzfor radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport. National Science Foundation (U.S.) (grant DMR-1231319) United States. Air Force. Office of Scientific Research, Failure Testing Service, Multidisciplinary Research Program of the University Research Initiative ((grant no. FA9550-15-1-0514) United States. Department of Energy. Office of Basic Energy Science (award no. DE-SC0001088 (MIT)) United States. Department of Energy. Office of Basic Energy Science (award no. DE-SC0001299) Samsung Scholarship Program National Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (DMR-1719875) 2018-10-11T13:15:26Z 2018-10-11T13:15:26Z 2018-09 2018-03 2018-10-10T16:25:46Z Article http://purl.org/eprint/type/JournalArticle 2375-2548 http://hdl.handle.net/1721.1/118423 Wang, Xiaoxue, Xu Zhang, Lei Sun, Dongwook Lee, Sunghwan Lee, Minghui Wang, Junjie Zhao, et al. “High Electrical Conductivity and Carrier Mobility in oCVD PEDOT Thin Films by Engineered Crystallization and Acid Treatment.” Science Advances 4, no. 9 (September 2018): eaat5780. https://orcid.org/0000-0002-0388-8311 https://orcid.org/0000-0002-2805-3353 https://orcid.org/0000-0003-2609-4204 https://orcid.org/0000-0002-1262-1264 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-6127-1056 http://dx.doi.org/10.1126/sciadv.aat5780 Science Advances Creative Commons Attribution-NonCommercial 4.0 International http://creativecommons.org/licenses/by-nc/4.0/ application/pdf American Association for the Advancement of Science (AAAS) Science Advances |
| spellingShingle | Wang, Xiaoxue Zhang, Xu Sun, Lei Lee, Dongwook Lee, Sunghwan Wang, Minghui Zhao, Junjie Shao-Horn, Yang Dinca, Mircea Palacios, Tomas Gleason, Karen K High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title | High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title_full | High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title_fullStr | High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title_full_unstemmed | High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title_short | High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment |
| title_sort | high electrical conductivity and carrier mobility in ocvd pedot thin films by engineered crystallization and acid treatment |
| url | http://hdl.handle.net/1721.1/118423 https://orcid.org/0000-0002-0388-8311 https://orcid.org/0000-0002-2805-3353 https://orcid.org/0000-0003-2609-4204 https://orcid.org/0000-0002-1262-1264 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-6127-1056 |
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