Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites
The emergence of methyl-ammonium lead halide (MAPbX₃) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this “defect tolerance” emerges from fundamental e...
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| Format: | Article |
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Cambridge University Press (CUP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/118954 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826208457440624640 |
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| author | Stevanović, Vladan Ginley, David S. Brandt, Riley E Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Stevanović, Vladan Ginley, David S. Brandt, Riley E Buonassisi, Anthony |
| author_sort | Stevanović, Vladan |
| collection | MIT |
| description | The emergence of methyl-ammonium lead halide (MAPbX₃) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this “defect tolerance” emerges from fundamental electronic-structure properties, including the orbital character of the conduction and valence band extrema, the charge-carrier effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX₃. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes. |
| first_indexed | 2024-09-23T14:05:58Z |
| format | Article |
| id | mit-1721.1/118954 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:05:58Z |
| publishDate | 2018 |
| publisher | Cambridge University Press (CUP) |
| record_format | dspace |
| spelling | mit-1721.1/1189542022-09-28T18:25:24Z Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites Stevanović, Vladan Ginley, David S. Brandt, Riley E Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Brandt, Riley E Buonassisi, Anthony The emergence of methyl-ammonium lead halide (MAPbX₃) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this “defect tolerance” emerges from fundamental electronic-structure properties, including the orbital character of the conduction and valence band extrema, the charge-carrier effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX₃. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes. 2018-11-08T15:30:57Z 2018-11-08T15:30:57Z 2015-06 2015-03 2018-10-31T13:56:01Z Article http://purl.org/eprint/type/JournalArticle 2159-6859 2159-6867 http://hdl.handle.net/1721.1/118954 Brandt, Riley E. et al.“Identifying Defect-Tolerant Semiconductors with High Minority-Carrier Lifetimes: Beyond Hybrid Lead Halide Perovskites.” MRS Communications 5, 2 (May 2015): 265–275 © 2015 Materials Research Society https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 http://dx.doi.org/10.1557/MRC.2015.26 MRS Communications Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Cambridge University Press (CUP) arXiv |
| spellingShingle | Stevanović, Vladan Ginley, David S. Brandt, Riley E Buonassisi, Anthony Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title | Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title_full | Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title_fullStr | Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title_full_unstemmed | Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title_short | Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites |
| title_sort | identifying defect tolerant semiconductors with high minority carrier lifetimes beyond hybrid lead halide perovskites |
| url | http://hdl.handle.net/1721.1/118954 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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