Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN....
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/119022 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811082170160119808 |
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| author | Hennig, Jonas Dadgar, Armin Zhang, Yuhao Sun, Min Piedra, Daniel Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hennig, Jonas Dadgar, Armin Zhang, Yuhao Sun, Min Piedra, Daniel Palacios, Tomas |
| author_sort | Hennig, Jonas |
| collection | MIT |
| description | This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN. The actual on-resistance of the drift region significantly depends on this
current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific
on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet
resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ~10 mΩ x cm² to below 1 mΩ x cm². Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes. |
| first_indexed | 2024-09-23T11:58:42Z |
| format | Article |
| id | mit-1721.1/119022 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:58:42Z |
| publishDate | 2018 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1190222022-10-01T07:25:20Z Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Hennig, Jonas Dadgar, Armin Zhang, Yuhao Sun, Min Piedra, Daniel Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Zhang, Yuhao Zhang, Yuhao Sun, Min Piedra, Daniel Palacios, Tomas This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN. The actual on-resistance of the drift region significantly depends on this current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ~10 mΩ x cm² to below 1 mΩ x cm². Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes. 2018-11-15T14:59:24Z 2018-11-15T14:59:24Z 2017-10 2017-06 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/119022 Zhang, Yuhao et al. “Reduction of on-Resistance and Current Crowding in Quasi-Vertical GaN Power Diodes.” Applied Physics Letters 111, 16 (October 16, 2017): 163506 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X en_US https://doi.org/10.1063/1.4989599 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Zhang, Yuhao |
| spellingShingle | Hennig, Jonas Dadgar, Armin Zhang, Yuhao Sun, Min Piedra, Daniel Palacios, Tomas Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title | Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title_full | Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title_fullStr | Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title_full_unstemmed | Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title_short | Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes |
| title_sort | reduction of on resistance and current crowding in quasi vertical gan power diodes |
| url | http://hdl.handle.net/1721.1/119022 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
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