Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN....
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/119022 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |