Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy
As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
AIP Publishing
2019
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| Online Access: | http://hdl.handle.net/1721.1/120023 https://orcid.org/0000-0002-5042-4819 https://orcid.org/0000-0001-7045-1200 |