Paraffin-enabled graphene transfer
The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reac...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019
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| Online Access: | https://hdl.handle.net/1721.1/121425 |
| _version_ | 1826200494777827328 |
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| author | Leong, Wei Sun Wang, Haozhe Yeo, Jingjie Martin-Martinez, Francisco J. Zubair, Ahmad Shen, Pin-Chun Mao, Yunwei Palacios, Tomas Buehler, Markus J Hong, Jin-Yong Kong, Jing |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Leong, Wei Sun Wang, Haozhe Yeo, Jingjie Martin-Martinez, Francisco J. Zubair, Ahmad Shen, Pin-Chun Mao, Yunwei Palacios, Tomas Buehler, Markus J Hong, Jin-Yong Kong, Jing |
| author_sort | Leong, Wei Sun |
| collection | MIT |
| description | The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm 2 V −1 s −1 ; electron mobility = 7438 cm 2 V −1 s −1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials. |
| first_indexed | 2024-09-23T11:37:20Z |
| format | Article |
| id | mit-1721.1/121425 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:37:20Z |
| publishDate | 2019 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1214252022-09-27T20:49:46Z Paraffin-enabled graphene transfer Leong, Wei Sun Wang, Haozhe Yeo, Jingjie Martin-Martinez, Francisco J. Zubair, Ahmad Shen, Pin-Chun Mao, Yunwei Palacios, Tomas Buehler, Markus J Hong, Jin-Yong Kong, Jing Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm 2 V −1 s −1 ; electron mobility = 7438 cm 2 V −1 s −1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials. United States. Office of Naval Research. Multidisciplinary University Research Initiative (Grant no. FA9550-15-1-0514) National Science Foundation (U.S.). Division of Materials Research. Electrical, Communications and Cyber Systems (1509197) National Science Foundation (U.S.). Center for Energy Efficient Electronics Science (NSF Award 0939514) King Abdullah University of Science and Technology (No. OSR- 2015-CRG4-2634) United States. Army Research Office (through MIT Institute for Soldier Nanotechnologies (Grant No. 023674)) Korea Research Institute of Chemical Technology (project no. KK1801-G01) National Research Foundation of Korea. Basic Science Research Program (NRF-2017R1C1B2007153) United States. Office of Naval Research (N00014–16–1–233) National Science Foundation (U.S.) (grant number ACI-1053575) Singapore. Agency for Science, Technology and Research. Computational Resource Centre Singapore. National Supercomputing Centre 2019-06-27T12:52:58Z 2019-06-27T12:52:58Z 2019-02 2019-06-26T18:32:23Z Article http://purl.org/eprint/type/JournalArticle 2041-1723 https://hdl.handle.net/1721.1/121425 Leong, Wei Sun, Haozhe Wang, Jingjie Yeo, Francisco J. Martin-Martinez, Ahmad Zubair, Pin-Chun Shen, Yunwei Mao, Tomas Palacios, Markus J. Buehler, Jin-Yong Hong & Jing Kong. "Paraffin-enabled graphene transfer." Nature Communications 10:1 (2019):867. en 10.1038/S41467-019-08813-X Nature Communications Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Leong, Wei Sun Wang, Haozhe Yeo, Jingjie Martin-Martinez, Francisco J. Zubair, Ahmad Shen, Pin-Chun Mao, Yunwei Palacios, Tomas Buehler, Markus J Hong, Jin-Yong Kong, Jing Paraffin-enabled graphene transfer |
| title | Paraffin-enabled graphene transfer |
| title_full | Paraffin-enabled graphene transfer |
| title_fullStr | Paraffin-enabled graphene transfer |
| title_full_unstemmed | Paraffin-enabled graphene transfer |
| title_short | Paraffin-enabled graphene transfer |
| title_sort | paraffin enabled graphene transfer |
| url | https://hdl.handle.net/1721.1/121425 |
| work_keys_str_mv | AT leongweisun paraffinenabledgraphenetransfer AT wanghaozhe paraffinenabledgraphenetransfer AT yeojingjie paraffinenabledgraphenetransfer AT martinmartinezfranciscoj paraffinenabledgraphenetransfer AT zubairahmad paraffinenabledgraphenetransfer AT shenpinchun paraffinenabledgraphenetransfer AT maoyunwei paraffinenabledgraphenetransfer AT palaciostomas paraffinenabledgraphenetransfer AT buehlermarkusj paraffinenabledgraphenetransfer AT hongjinyong paraffinenabledgraphenetransfer AT kongjing paraffinenabledgraphenetransfer |