Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max)...
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2019
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| Online Access: | https://hdl.handle.net/1721.1/121508 |
| _version_ | 1811072932588290048 |
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| author | Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas |
| author_sort | Palacios, Tomas |
| collection | MIT |
| description | The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max) and the maximum transconductance (g-m,) decreased gradually as the mist exposure time increased, up to 23% and 10%, respectively. Moreover, the gate lag ratio increased around 10% during mist exposure. In contrast, devices with a GL showed a robust behavior and not significant changes in the electrical characteristics in both dc and pulsed conditions. The origin of these behaviors has been discussed and the results pointed to the GL as the key factor for improving the moisture resistance of the SiN passivation layer. |
| first_indexed | 2024-09-23T09:22:40Z |
| format | Article |
| id | mit-1721.1/121508 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:22:40Z |
| publishDate | 2019 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1215082022-09-26T11:19:18Z Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max) and the maximum transconductance (g-m,) decreased gradually as the mist exposure time increased, up to 23% and 10%, respectively. Moreover, the gate lag ratio increased around 10% during mist exposure. In contrast, devices with a GL showed a robust behavior and not significant changes in the electrical characteristics in both dc and pulsed conditions. The origin of these behaviors has been discussed and the results pointed to the GL as the key factor for improving the moisture resistance of the SiN passivation layer. Danish National Council for Educational and Vocational Guidance (CSD2009-00046) Confederación de Asociaciones de Vecinos del Estado Español (TEC2012-38247) Grafistas Associados do RS (ENE2013-47904-C3) European Union. Horizon 2020 Research and Innovation Programme (Grant 642688) United States. Office of Naval Research. Multidisciplinary University Research Initiative. Foldable and Adaptive Two-dimensional Electronics 2019-07-08T14:31:50Z 2019-07-08T14:31:50Z 2017-10 2017-07 2019-07-01T12:51:18Z Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/121508 Romero, M. Fátima, Alberto Boscá, Jorge Pedrós, Javier Martínez, Rajveer Fandan, Tomás Palacios and Fernando Calle. "Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure." Electron Device Letters 38 no.10 (October 2017): 1441-1444. en 10.1109/LED.2017.2747500 Electron device letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Palacios, Tomas Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title | Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title_full | Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title_fullStr | Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title_full_unstemmed | Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title_short | Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure |
| title_sort | impact of 2d graphene on sin passivated algan gan mis hemts under mist exposure |
| url | https://hdl.handle.net/1721.1/121508 |
| work_keys_str_mv | AT palaciostomas impactof2dgrapheneonsinpassivatedalganganmishemtsundermistexposure |