Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max)...
| Autor principal: | |
|---|---|
| Otros Autores: | |
| Formato: | Artículo |
| Lenguaje: | English |
| Publicado: |
Institute of Electrical and Electronics Engineers (IEEE)
2019
|
| Acceso en línea: | https://hdl.handle.net/1721.1/121508 |