MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates...
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| Format: | Article |
| Language: | English |
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Elsevier BV
2019
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| Online Access: | https://hdl.handle.net/1721.1/121543 |
| _version_ | 1811069876538703872 |
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| author | Lemettinen, Jori Okumura, Hironori Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lemettinen, Jori Okumura, Hironori Palacios, Tomas |
| author_sort | Lemettinen, Jori |
| collection | MIT |
| description | We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan. |
| first_indexed | 2024-09-23T08:18:22Z |
| format | Article |
| id | mit-1721.1/121543 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T08:18:22Z |
| publishDate | 2019 |
| publisher | Elsevier BV |
| record_format | dspace |
| spelling | mit-1721.1/1215432022-09-23T12:12:14Z MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality Lemettinen, Jori Okumura, Hironori Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan. Academy of Finland (grant 297916) Aalto University Science and Technology Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant no. 16H06424) Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant no. 17K14110) 2019-07-09T16:52:57Z 2019-07-09T16:52:57Z 2018-04 2019-07-01T13:58:33Z Article http://purl.org/eprint/type/JournalArticle 0022-0248 https://hdl.handle.net/1721.1/121543 Lemettinen, J., H. Okumura, I. Kim, C. Kauppinen, T. Palacios and S. Suihkonen. "MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality." Journal of Crystal Growth 487, no. 1 (April 2018): pages 12-16. en 10.1016/J.JCRYSGRO.2018.02.013 Journal of Crystal Growth Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Elsevier BV arXiv |
| spellingShingle | Lemettinen, Jori Okumura, Hironori Palacios, Tomas MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title | MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title_full | MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title_fullStr | MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title_full_unstemmed | MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title_short | MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality |
| title_sort | movpe growth of n polar aln on 4h sic effect of substrate miscut on layer quality |
| url | https://hdl.handle.net/1721.1/121543 |
| work_keys_str_mv | AT lemettinenjori movpegrowthofnpolaralnon4hsiceffectofsubstratemiscutonlayerquality AT okumurahironori movpegrowthofnpolaralnon4hsiceffectofsubstratemiscutonlayerquality AT palaciostomas movpegrowthofnpolaralnon4hsiceffectofsubstratemiscutonlayerquality |