MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier BV
2019
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| Online Access: | https://hdl.handle.net/1721.1/121543 |