MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates...
Main Authors: | Lemettinen, Jori, Okumura, Hironori, Palacios, Tomas |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | English |
Published: |
Elsevier BV
2019
|
Online Access: | https://hdl.handle.net/1721.1/121543 |
Similar Items
-
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
by: Lemettinen, Jori, et al.
Published: (2019) -
N-polar AlN buffer growth by MOVPE for transistor applications
by: Lemettinen, Jori, et al.
Published: (2019) -
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE
by: Sun Maosong, et al.
Published: (2022-11-01) -
Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
by: Alexander A. Koryakin, et al.
Published: (2022-09-01) -
Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
by: Okumura, Hironori, et al.
Published: (2022)