Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
We present an extensive analysis of the degradation of GaN-on-GaN fin-vertical transistors submitted to stress under positive gate voltage and off-state conditions. By analysing the degradation kinetics we demonstrate the existence of different processes: (i) trapping of electrons in the gate insula...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier BV
2019
|
| Online Access: | https://hdl.handle.net/1721.1/121546 |
| _version_ | 1811090424100552704 |
|---|---|
| author | Ruzzarin, M. Meneghini, M. De Santi, C. Sun, Min Palacios, Tomas Meneghesso, G. Zanoni, E. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Ruzzarin, M. Meneghini, M. De Santi, C. Sun, Min Palacios, Tomas Meneghesso, G. Zanoni, E. |
| author_sort | Ruzzarin, M. |
| collection | MIT |
| description | We present an extensive analysis of the degradation of GaN-on-GaN fin-vertical transistors submitted to stress under positive gate voltage and off-state conditions. By analysing the degradation kinetics we demonstrate the existence of different processes: (i) trapping of electrons in the gate insulator under positive gate bias, (ii) time-dependent breakdown of the gate MOS structure under forward gate voltage; (iii) catastrophic failure for off-state voltages higher than 280 V. 2D simulations are used to identify the physical location of the failed region, and to investigate the dependence of electric field on fin width (values between 70 nm, 195 nm and 280 nm). Keywords: Vertical transistors; GaN; Stability; Degradation; Reliability |
| first_indexed | 2024-09-23T14:45:25Z |
| format | Article |
| id | mit-1721.1/121546 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:45:25Z |
| publishDate | 2019 |
| publisher | Elsevier BV |
| record_format | dspace |
| spelling | mit-1721.1/1215462022-09-29T10:25:18Z Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments Ruzzarin, M. Meneghini, M. De Santi, C. Sun, Min Palacios, Tomas Meneghesso, G. Zanoni, E. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science We present an extensive analysis of the degradation of GaN-on-GaN fin-vertical transistors submitted to stress under positive gate voltage and off-state conditions. By analysing the degradation kinetics we demonstrate the existence of different processes: (i) trapping of electrons in the gate insulator under positive gate bias, (ii) time-dependent breakdown of the gate MOS structure under forward gate voltage; (iii) catastrophic failure for off-state voltages higher than 280 V. 2D simulations are used to identify the physical location of the failed region, and to investigate the dependence of electric field on fin width (values between 70 nm, 195 nm and 280 nm). Keywords: Vertical transistors; GaN; Stability; Degradation; Reliability 2019-07-09T17:25:22Z 2019-07-09T17:25:22Z 2018-09 2018-06 2019-07-01T13:18:00Z Article http://purl.org/eprint/type/JournalArticle 0026-2714 https://hdl.handle.net/1721.1/121546 Ruzzarin, M. et al. "Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments." Microelectronics Reliability 88-90 (September 2018): 620-626 © 2018 The Authors en http://dx.doi.org/10.1016/j.microrel.2018.06.044 Microelectronics Reliability Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Elsevier BV Elsevier |
| spellingShingle | Ruzzarin, M. Meneghini, M. De Santi, C. Sun, Min Palacios, Tomas Meneghesso, G. Zanoni, E. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title | Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title_full | Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title_fullStr | Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title_full_unstemmed | Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title_short | Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments |
| title_sort | degradation of vertical gan on gan fin transistors step stress and constant voltage experiments |
| url | https://hdl.handle.net/1721.1/121546 |
| work_keys_str_mv | AT ruzzarinm degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT meneghinim degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT desantic degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT sunmin degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT palaciostomas degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT meneghessog degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments AT zanonie degradationofverticalganonganfintransistorsstepstressandconstantvoltageexperiments |