Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

We present an extensive analysis of the degradation of GaN-on-GaN fin-vertical transistors submitted to stress under positive gate voltage and off-state conditions. By analysing the degradation kinetics we demonstrate the existence of different processes: (i) trapping of electrons in the gate insula...

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Bibliographic Details
Main Authors:	Ruzzarin, M., Meneghini, M., De Santi, C., Sun, Min, Palacios, Tomas, Meneghesso, G., Zanoni, E.
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	English
Published:	Elsevier BV 2019
Online Access:	https://hdl.handle.net/1721.1/121546

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