Deep elastic strain engineering of bandgap through machine learning

Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic m...

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Bibliographic Details
Main Authors: Shi, Zhe, Dao, Ming, Li, Ju
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Proceedings of the National Academy of Sciences 2020
Subjects:
Online Access:https://hdl.handle.net/1721.1/124458

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