Deep elastic strain engineering of bandgap through machine learning

Deep elastic strain engineering of bandgap through machine learning

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Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic m...

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Bibliographic Details
Main Authors: Shi, Zhe, Dao, Ming, Li, Ju
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Proceedings of the National Academy of Sciences 2020
Subjects:
Multidisciplinary
Online Access:https://hdl.handle.net/1721.1/124458
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