Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering
Heterostructures of topological insulators and ferromagnets offer new opportunities in spintronics and a route to novel anomalous Hall states. In one such structure, EuS/Bi2Se3, a dramatic enhancement of the Curie temperature was recently observed. We performed Raman spectroscopy on a similar set of...
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American Physical Society (APS)
2020
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| Online Access: | https://hdl.handle.net/1721.1/124744 |
| _version_ | 1826200495192014848 |
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| author | Osterhoudt, Gavin B. Carelli, Ryan Burch, Kenneth S. Katmis, Ferhat Gedik, Nuh Moodera, Jagadeesh |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Osterhoudt, Gavin B. Carelli, Ryan Burch, Kenneth S. Katmis, Ferhat Gedik, Nuh Moodera, Jagadeesh |
| author_sort | Osterhoudt, Gavin B. |
| collection | MIT |
| description | Heterostructures of topological insulators and ferromagnets offer new opportunities in spintronics and a route to novel anomalous Hall states. In one such structure, EuS/Bi2Se3, a dramatic enhancement of the Curie temperature was recently observed. We performed Raman spectroscopy on a similar set of thin films to investigate the magnetic and lattice excitations. Interfacial strain was monitored through its effects on the Bi2Se3 phonon modes while the magnetic system was probed through the EuS Raman mode. Despite its appearance in bare EuS, the heterostructures lack the corresponding EuS Raman signal. Through numerical calculations we rule out the possibility of Fabry-Perot interference suppressing the mode. Direct measurements of the magnetic system also eliminate room temperature ordering from suppressing the mode. We therefore attribute the absence of a magnetic signal in EuS to a charge transfer with the Bi2Se3. This could provide an additional pathway for manipulating the magnetic, optical, or electronic response of topological heterostructures. ©2018 |
| first_indexed | 2024-09-23T11:37:21Z |
| format | Article |
| id | mit-1721.1/124744 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T11:37:21Z |
| publishDate | 2020 |
| publisher | American Physical Society (APS) |
| record_format | dspace |
| spelling | mit-1721.1/1247442022-09-27T20:48:30Z Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering Charge transfer in EuS/Bi[subscript 2]Se[subscript 3] heterostructures as indicated by the absence of Raman scattering Osterhoudt, Gavin B. Carelli, Ryan Burch, Kenneth S. Katmis, Ferhat Gedik, Nuh Moodera, Jagadeesh Massachusetts Institute of Technology. Department of Physics Heterostructures of topological insulators and ferromagnets offer new opportunities in spintronics and a route to novel anomalous Hall states. In one such structure, EuS/Bi2Se3, a dramatic enhancement of the Curie temperature was recently observed. We performed Raman spectroscopy on a similar set of thin films to investigate the magnetic and lattice excitations. Interfacial strain was monitored through its effects on the Bi2Se3 phonon modes while the magnetic system was probed through the EuS Raman mode. Despite its appearance in bare EuS, the heterostructures lack the corresponding EuS Raman signal. Through numerical calculations we rule out the possibility of Fabry-Perot interference suppressing the mode. Direct measurements of the magnetic system also eliminate room temperature ordering from suppressing the mode. We therefore attribute the absence of a magnetic signal in EuS to a charge transfer with the Bi2Se3. This could provide an additional pathway for manipulating the magnetic, optical, or electronic response of topological heterostructures. ©2018 Science and Technological Research Council of Turkey BIDEB 2232 Program (award no. 117C050) NSF (grant no. DMR-1207469) NSF (grant no. DMR1231319) ONR (grant no. N00014-16-1-2657) 2020-04-17T20:28:14Z 2020-04-17T20:28:14Z 2018-07 2017-08 2019-03-26T12:51:50Z Article http://purl.org/eprint/type/JournalArticle 2469-9950 2469-9969 https://hdl.handle.net/1721.1/124744 Osterhoudt, Gavin B., et al., "Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering." Physical review B 98 (July 2018): no. 014308 doi 10.1103/PHYSREVB.98.014308 ©2018 Author(s) 10.1103/PHYSREVB.98.014308 Physical review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society (APS) APS |
| spellingShingle | Osterhoudt, Gavin B. Carelli, Ryan Burch, Kenneth S. Katmis, Ferhat Gedik, Nuh Moodera, Jagadeesh Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title | Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title_full | Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title_fullStr | Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title_full_unstemmed | Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title_short | Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering |
| title_sort | charge transfer in eus bi2se3 heterostructures as indicated by the absence of raman scattering |
| url | https://hdl.handle.net/1721.1/124744 |
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