Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies
Gallium nitride (GaN) transistors are desirable for use in power electronics because of their low resistance and capacitance as compared to silicon devices. However, when switched at high frequencies, GaN transistors experience high dynamic on resistance which is both detrimental and difficult to me...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: | https://hdl.handle.net/1721.1/125074 |
| _version_ | 1811068313651904512 |
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| author | Galapon, Bryson Hanson, Alex J. Perreault, David J. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Galapon, Bryson Hanson, Alex J. Perreault, David J. |
| author_sort | Galapon, Bryson |
| collection | MIT |
| description | Gallium nitride (GaN) transistors are desirable for use in power electronics because of their low resistance and capacitance as compared to silicon devices. However, when switched at high frequencies, GaN transistors experience high dynamic on resistance which is both detrimental and difficult to measure. We propose a technique to measure dynamic on resistance of GaN transistors while exposing them to voltage and current waveforms that are similar to those seen in high-frequency (HF) power converters. The technique can be performed at high frequency while disambiguating loss in the output capacitance (Poss) and can be applied across frequency, temperature, and off-state voltage. The result is a lumped Ron value which is easily incorporated into device models to provide a more accurate basis for design, analysis, and simulation of HF converters. We apply this technique to evaluate commercial GaN transistors at 3 MHz and find that dynamic Ron is roughly 4-6 times the room-temperature static Ron values usually quoted in datasheets, with device-dependent temperature and off-state voltage dependence. |
| first_indexed | 2024-09-23T07:54:18Z |
| format | Article |
| id | mit-1721.1/125074 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T07:54:18Z |
| publishDate | 2020 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1250742022-09-23T09:32:47Z Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies Galapon, Bryson Hanson, Alex J. Perreault, David J. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gallium nitride (GaN) transistors are desirable for use in power electronics because of their low resistance and capacitance as compared to silicon devices. However, when switched at high frequencies, GaN transistors experience high dynamic on resistance which is both detrimental and difficult to measure. We propose a technique to measure dynamic on resistance of GaN transistors while exposing them to voltage and current waveforms that are similar to those seen in high-frequency (HF) power converters. The technique can be performed at high frequency while disambiguating loss in the output capacitance (Poss) and can be applied across frequency, temperature, and off-state voltage. The result is a lumped Ron value which is easily incorporated into device models to provide a more accurate basis for design, analysis, and simulation of HF converters. We apply this technique to evaluate commercial GaN transistors at 3 MHz and find that dynamic Ron is roughly 4-6 times the room-temperature static Ron values usually quoted in datasheets, with device-dependent temperature and off-state voltage dependence. 2020-05-06T19:13:07Z 2020-05-06T19:13:07Z 2018-09 2018-06 2020-01-14T19:09:04Z Article http://purl.org/eprint/type/JournalArticle 978-1-5386-5541-2 https://hdl.handle.net/1721.1/125074 Galapon, Bryson J. et al. "Measuring Dynamic on Resistance in GaN Transistors at MHz Frequencies." IEEE 19th Workshop on Control and Modeling for Power Electronics (June 2018): 1-8 ©2018 IEEE en http://dx.doi.org/10.1109/COMPEL.2018.8460051 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. Perreault via Phoebe Ayers |
| spellingShingle | Galapon, Bryson Hanson, Alex J. Perreault, David J. Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title | Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title_full | Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title_fullStr | Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title_full_unstemmed | Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title_short | Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies |
| title_sort | measuring dynamic on resistance in gan transistors at mhz frequencies |
| url | https://hdl.handle.net/1721.1/125074 |
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