Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of p...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
|
| Online Access: | https://hdl.handle.net/1721.1/126183 |
| _version_ | 1826214525684154368 |
|---|---|
| author | Warnock, Shireen M. Lemus, Allison Joh, Jungwoo Krishnan, Srikanth Pendharkar, Sameer del Alamo, Jesus A |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Warnock, Shireen M. Lemus, Allison Joh, Jungwoo Krishnan, Srikanth Pendharkar, Sameer del Alamo, Jesus A |
| author_sort | Warnock, Shireen M. |
| collection | MIT |
| description | We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates. |
| first_indexed | 2024-09-23T16:07:09Z |
| format | Article |
| id | mit-1721.1/126183 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T16:07:09Z |
| publishDate | 2020 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1261832022-09-29T18:19:41Z Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature Warnock, Shireen M. Lemus, Allison Joh, Jungwoo Krishnan, Srikanth Pendharkar, Sameer del Alamo, Jesus A Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lincoln Laboratory We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates. 2020-07-14T18:46:04Z 2020-07-14T18:46:04Z 2017-07 Article http://purl.org/eprint/type/JournalArticle 0018-9383 1557-9646 https://hdl.handle.net/1721.1/126183 Warnock, Shireen et al. "Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature." IEEE Transactions on Electron Devices 64, 8 (August 2018): 3132 - 3138 © 2017 IEEE http://dx.doi.org/10.1109/ted.2017.2717924 IEEE Transactions on Electron Devices Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. del Alamo via Phoebe Ayers |
| spellingShingle | Warnock, Shireen M. Lemus, Allison Joh, Jungwoo Krishnan, Srikanth Pendharkar, Sameer del Alamo, Jesus A Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title_full | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title_fullStr | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title_full_unstemmed | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title_short | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature |
| title_sort | time dependent dielectric breakdown in high voltage gan mis hemts the role of temperature |
| url | https://hdl.handle.net/1721.1/126183 |
| work_keys_str_mv | AT warnockshireenm timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature AT lemusallison timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature AT johjungwoo timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature AT krishnansrikanth timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature AT pendharkarsameer timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature AT delalamojesusa timedependentdielectricbreakdowninhighvoltageganmishemtstheroleoftemperature |