Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the o...
| Main Authors: | , , , , |
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| Format: | Article |
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IOP Publishing
2020
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| Online Access: | https://hdl.handle.net/1721.1/126201 |
| _version_ | 1811086424517115904 |
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| author | Chou, Po-Chien Hsieh, Ting-En Cheng, Stone del Alamo, Jesus A Chang, Edward Yi |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Chou, Po-Chien Hsieh, Ting-En Cheng, Stone del Alamo, Jesus A Chang, Edward Yi |
| author_sort | Chou, Po-Chien |
| collection | MIT |
| description | This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies. |
| first_indexed | 2024-09-23T13:25:42Z |
| format | Article |
| id | mit-1721.1/126201 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T13:25:42Z |
| publishDate | 2020 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1262012022-09-28T14:09:51Z Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications Chou, Po-Chien Hsieh, Ting-En Cheng, Stone del Alamo, Jesus A Chang, Edward Yi Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies. 2020-07-15T15:08:36Z 2020-07-15T15:08:36Z 2018-04 2018-01 Article http://purl.org/eprint/type/JournalArticle 0268-1242 1361-6641 https://hdl.handle.net/1721.1/126201 Po-Chien Chou et al. "Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications." Semiconductor Science and Technology 33, 5 (April 2018): 055012 © 2018 IOP Publishing Ltd http://dx.doi.org/10.1088/1361-6641/aabb6a Semiconductor Science and Technology Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/msword application/pdf IOP Publishing Prof. del Alamo via Phoebe Ayers |
| spellingShingle | Chou, Po-Chien Hsieh, Ting-En Cheng, Stone del Alamo, Jesus A Chang, Edward Yi Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title | Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title_full | Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title_fullStr | Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title_full_unstemmed | Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title_short | Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications |
| title_sort | comprehensive dynamic on resistance assessments in gan on si mis hemts for power switching applications |
| url | https://hdl.handle.net/1721.1/126201 |
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