Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the o...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
IOP Publishing
2020
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| Online Access: | https://hdl.handle.net/1721.1/126201 |