Scaling Effects on Single-Event Transients in InGaAs FinFETs

Scaling Effects on Single-Event Transients in InGaAs FinFETs

The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive vo...

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Bibliographic Details
Main Authors: Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access:https://hdl.handle.net/1721.1/126203

Internet

https://hdl.handle.net/1721.1/126203

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