Colossal oxygen vacancy formation at a fluorite-bixbyite interface
Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush archit...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer Science and Business Media LLC
2020
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| Online Access: | https://hdl.handle.net/1721.1/126752 |
| _version_ | 1811091252997783552 |
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| author | Sun, Lixin Lu, Qiyang Yildiz, Bilge |
| author2 | Massachusetts Institute of Technology. Laboratory for Electrochemical Interfaces |
| author_facet | Massachusetts Institute of Technology. Laboratory for Electrochemical Interfaces Sun, Lixin Lu, Qiyang Yildiz, Bilge |
| author_sort | Sun, Lixin |
| collection | MIT |
| description | Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush architecture designed to create high-density interfacial oxygen vacancies. An atomically well-defined (111) heterointerface between the fluorite CeO2 and the bixbyite Y2O3 is found to induce a charge modulation between Y3+ and Ce4+ ions enabled by the chemical valence mismatch between the two elements. Local structure and chemical analyses, along with theoretical calculations, suggest that more than 10% of oxygen atoms are spontaneously removed without deteriorating the lattice structure. Our fluorite–bixbyite nanobrush provides an excellent platform for the rational design of interfacial oxide architectures to precisely create, control, and transport oxygen vacancies critical for developing ionotronic and memristive devices for advanced energy and neuromorphic computing technologies. |
| first_indexed | 2024-09-23T14:59:33Z |
| format | Article |
| id | mit-1721.1/126752 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:59:33Z |
| publishDate | 2020 |
| publisher | Springer Science and Business Media LLC |
| record_format | dspace |
| spelling | mit-1721.1/1267522022-10-01T23:49:16Z Colossal oxygen vacancy formation at a fluorite-bixbyite interface Sun, Lixin Lu, Qiyang Yildiz, Bilge Massachusetts Institute of Technology. Laboratory for Electrochemical Interfaces Massachusetts Institute of Technology. Department of Materials Science and Engineering Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush architecture designed to create high-density interfacial oxygen vacancies. An atomically well-defined (111) heterointerface between the fluorite CeO2 and the bixbyite Y2O3 is found to induce a charge modulation between Y3+ and Ce4+ ions enabled by the chemical valence mismatch between the two elements. Local structure and chemical analyses, along with theoretical calculations, suggest that more than 10% of oxygen atoms are spontaneously removed without deteriorating the lattice structure. Our fluorite–bixbyite nanobrush provides an excellent platform for the rational design of interfacial oxide architectures to precisely create, control, and transport oxygen vacancies critical for developing ionotronic and memristive devices for advanced energy and neuromorphic computing technologies. United States. Department of Energy. Office of Science User Facility (Contract DE-AC02-05CH11231) United States. Department of Energy. Office of Science (Contract DE-AC02-06CH11357) 2020-08-24T15:53:16Z 2020-08-24T15:53:16Z 2020-03 2019-08 2020-08-21T13:21:08Z Article http://purl.org/eprint/type/JournalArticle 2041-1723 https://hdl.handle.net/1721.1/126752 Lee, Dongkyu et al. “Colossal oxygen vacancy formation at a fluorite-bixbyite interface.” Nature Communications, 11, 1 (March 2020): 1371 © 2020 The Author(s) en 10.1038/S41467-020-15153-8 Nature Communications Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf Springer Science and Business Media LLC Nature |
| spellingShingle | Sun, Lixin Lu, Qiyang Yildiz, Bilge Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title | Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title_full | Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title_fullStr | Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title_full_unstemmed | Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title_short | Colossal oxygen vacancy formation at a fluorite-bixbyite interface |
| title_sort | colossal oxygen vacancy formation at a fluorite bixbyite interface |
| url | https://hdl.handle.net/1721.1/126752 |
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