In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor d...
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| Format: | Article |
| Language: | English |
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AIP Publishing
2020
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| Online Access: | https://hdl.handle.net/1721.1/127207 |
| _version_ | 1826206706425659392 |
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| author | Fitzgerald, Eugene A |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Fitzgerald, Eugene A |
| author_sort | Fitzgerald, Eugene A |
| collection | MIT |
| description | We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform. |
| first_indexed | 2024-09-23T13:37:18Z |
| format | Article |
| id | mit-1721.1/127207 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T13:37:18Z |
| publishDate | 2020 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1272072022-09-28T15:06:14Z In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations Fitzgerald, Eugene A Massachusetts Institute of Technology. Department of Materials Science and Engineering We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform. National Research Foundation (U.S.) (Grant NRF-CRP12-2013-04) 2020-09-09T11:33:48Z 2020-09-09T11:33:48Z 2018-11 2018-09 2020-09-08T18:28:52Z Article http://purl.org/eprint/type/JournalArticle 2158-3226 https://hdl.handle.net/1721.1/127207 Wang, Yue et al. “In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations.” AIP Advances, 8, 11 (Novemver 2018): 115132 © 2018 The Author(s) en 10.1063/1.5058717 AIP Advances Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing American Institute of Physics (AIP) |
| spellingShingle | Fitzgerald, Eugene A In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title | In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title_full | In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title_fullStr | In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title_full_unstemmed | In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title_short | In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations |
| title_sort | in₀ ₄₉ ga₀ ₅₁ p gaas heterojunction bipolar transistors hbts on 200 mm si substrates effects of base thickness base and sub collector doping concentrations |
| url | https://hdl.handle.net/1721.1/127207 |
| work_keys_str_mv | AT fitzgeraldeugenea in049ga051pgaasheterojunctionbipolartransistorshbtson200mmsisubstrateseffectsofbasethicknessbaseandsubcollectordopingconcentrations |