Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices
An energy-efficient voltage-controlled domain wall (DW) device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the DW motion utilizing spin transfer or spin-orbit torques in association with...
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Format: | Article |
Language: | English |
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IOP Publishing
2020
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Online Access: | https://hdl.handle.net/1721.1/127771 |
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author | Ross, Caroline A. |
author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Ross, Caroline A. |
author_sort | Ross, Caroline A. |
collection | MIT |
description | An energy-efficient voltage-controlled domain wall (DW) device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the DW motion utilizing spin transfer or spin-orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the DW are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy-efficient voltage-controlled nanomagnetic deep neural networks that can learn in real time. |
first_indexed | 2024-09-23T13:52:26Z |
format | Article |
id | mit-1721.1/127771 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T13:52:26Z |
publishDate | 2020 |
publisher | IOP Publishing |
record_format | dspace |
spelling | mit-1721.1/1277712022-10-01T17:41:30Z Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices Ross, Caroline A. Massachusetts Institute of Technology. Department of Materials Science and Engineering An energy-efficient voltage-controlled domain wall (DW) device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the DW motion utilizing spin transfer or spin-orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the DW are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy-efficient voltage-controlled nanomagnetic deep neural networks that can learn in real time. National Science Foundation (U.S.) (Award 1639921) 2020-09-29T14:50:12Z 2020-09-29T14:50:12Z 2020-01 2019-12 2020-09-11T13:21:16Z Article http://purl.org/eprint/type/JournalArticle 0957-4484 https://hdl.handle.net/1721.1/127771 Azam, Md. Ali et al. “Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices.” Nanotechnology, 31, 14 (January 2020) © 2020 The Author(s) en 10.1088/1361-6528/AB6234 Nanotechnology Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf IOP Publishing arXiv |
spellingShingle | Ross, Caroline A. Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title | Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title_full | Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title_fullStr | Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title_full_unstemmed | Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title_short | Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices |
title_sort | voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices |
url | https://hdl.handle.net/1721.1/127771 |
work_keys_str_mv | AT rosscarolinea voltagecontrolofdomainwallsinmagneticnanowiresforenergyefficientneuromorphicdevices |