A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture
This article presents a CMOS-based, ultra-broadband frequency-modulated continuous-wave (FMCW) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitr...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2021
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| Online Access: | https://hdl.handle.net/1721.1/129442 |
| _version_ | 1811069960512864256 |
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| author | Yi, Xiang Wang, Cheng Chen, Xibi Wang, Jinchen Grajal, Jes ́us Han, Ruonan |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Yi, Xiang Wang, Cheng Chen, Xibi Wang, Jinchen Grajal, Jes ́us Han, Ruonan |
| author_sort | Yi, Xiang |
| collection | MIT |
| description | This article presents a CMOS-based, ultra-broadband frequency-modulated continuous-wave (FMCW) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitry and ensures that the peak output power and sensitivity are maintained across the entire band of operation. The speed and linearity of frequency chirping are also improved by the comb system. An antenna-sharing scheme based on a square-mixer-first architecture is used, which not only leads to compact size but also facilitates the stitching of the multichannel radar IF data. To avoid the usage of high-cost silicon lens in the on-chip broadband radiation, a multi-resonance substrate-integrated-waveguide (SIW) antenna structure is innovated, which provides 15% fractional bandwidth for impedance matching. As a proof of concept, a five-tone radar prototype that seamlessly scans the entire 220-to-320-GHz band is demonstrated. In the measurement, the multi-channel-aggregated equivalent-isotropically radiated power (EIRP) is 0.6 dBm and is further boosted to ~20 dBm with a TPX (polymethylpentene) lens. The measured minimum single-sideband noise figure (SSB NF) of the receiver, including the antenna loss and baseband amplifier, is 22.8 dB. Due to the comb architecture, the EIRP and NF values fluctuate by only 8.8 and 14.6 dB, respectively, across the 100-GHz bandwidth. The chip has a die size of 5 mm² and consumes 840 mW of dc power. This work marks the first CMOS demonstration of THz radar and achieves record bandwidth and ranging resolution among all radar front-end chips. |
| first_indexed | 2024-09-23T08:19:37Z |
| format | Article |
| id | mit-1721.1/129442 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T08:19:37Z |
| publishDate | 2021 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1294422022-09-23T12:21:21Z A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture Yi, Xiang Wang, Cheng Chen, Xibi Wang, Jinchen Grajal, Jes ́us Han, Ruonan Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science This article presents a CMOS-based, ultra-broadband frequency-modulated continuous-wave (FMCW) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitry and ensures that the peak output power and sensitivity are maintained across the entire band of operation. The speed and linearity of frequency chirping are also improved by the comb system. An antenna-sharing scheme based on a square-mixer-first architecture is used, which not only leads to compact size but also facilitates the stitching of the multichannel radar IF data. To avoid the usage of high-cost silicon lens in the on-chip broadband radiation, a multi-resonance substrate-integrated-waveguide (SIW) antenna structure is innovated, which provides 15% fractional bandwidth for impedance matching. As a proof of concept, a five-tone radar prototype that seamlessly scans the entire 220-to-320-GHz band is demonstrated. In the measurement, the multi-channel-aggregated equivalent-isotropically radiated power (EIRP) is 0.6 dBm and is further boosted to ~20 dBm with a TPX (polymethylpentene) lens. The measured minimum single-sideband noise figure (SSB NF) of the receiver, including the antenna loss and baseband amplifier, is 22.8 dB. Due to the comb architecture, the EIRP and NF values fluctuate by only 8.8 and 14.6 dB, respectively, across the 100-GHz bandwidth. The chip has a die size of 5 mm² and consumes 840 mW of dc power. This work marks the first CMOS demonstration of THz radar and achieves record bandwidth and ranging resolution among all radar front-end chips. National Science Foundation (U.S.). Career Grant (CAREER ECCS-1653100) 2021-01-19T15:57:22Z 2021-01-19T15:57:22Z 2020-09 2020-12-17T14:54:09Z Article http://purl.org/eprint/type/JournalArticle 0018-9200 1558-173X https://hdl.handle.net/1721.1/129442 Yi, Xiang et al. “A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture.” IEEE Journal of Solid-State Circuits (September 2020) © 2020 The Author(s) en 10.1109/JSSC.2020.3020291 IEEE Journal of Solid-State Circuits Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) MIT web domain |
| spellingShingle | Yi, Xiang Wang, Cheng Chen, Xibi Wang, Jinchen Grajal, Jes ́us Han, Ruonan A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title | A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title_full | A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title_fullStr | A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title_full_unstemmed | A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title_short | A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture |
| title_sort | 220 to 320 ghz fmcw radar in 65 nm cmos using a frequency comb architecture |
| url | https://hdl.handle.net/1721.1/129442 |
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